I want to deposit CdSe on TiO2(TNT nanotube) by electrochemical deposition methods to improve the absorption of light from the ultraviolet region to the visible and increase photocurrent response (PEC) in order to use it in solar cells
thanks a lot
i want to use it in in solar cells and the band gap its 3,47 how can I make it 1.3 or near to this number
thanks
Well, as I mentioned in anoter post, CdSe has a band gap of 1.7 eV. if you need 1.3 eV CdSe is not your semiconductor. You can try for example CdTe... Both are possible to electrodeposit but is not only the band gap you need to change but be aware on the band aligment you need for your device. Try to figure out an electronic diagram of your proposed cell and see which band gap and VC, CB band positions you need and then look for the SC to be used.
I think you have to respect other answers about a similar question of you. I gave a detailed answer and you overlooked it! please see the link of your previous question: https://www.researchgate.net/post/How_to_improve_the_absorption_of_light_from_the_ultraviolet_region_to_the_visible where my answer was:
Titaniumoxide is widegap material, therefore it absorbes ultraviolet light. In order to absorb more radiation from the solar radiation, one ha to use a narrower gap material
e.g. as you suggested Cd Se. Cd Se has a bandgap of about 1.6 eV that can be modified by the deposited grain size.As the grain size decreases the bandgap increases. So, to absorb more light it may be preferable to increase the grain size. One of the most important things is that the interface states between the two materials must be minimized. This is a conceptual point of view but there is papers treating the propped structure. As an example please follow the Link:web.stanford.edu/.../Solar%20Cells/MATSCI%20316%20Quantum%20D..
wish you success
3 days ago
Really i can not understand such behavior.
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