This is really impossible to remove both organic and inorganic substances from these wafers in just one wet etch and without damaging the wafer material.
HF will remove native oxides and some metals, some metals will need other etchants, and organics should be removed by oxygen plasma.
Maybe of some interest for your query ― on selectively etching metals (Cu, Ag) from a germanium substrate: https://www.researchgate.net/post/How_can_I_remove_a_thin_Cu_Ag_film_from_germanium_substrate_using_the_chemical_method