In RRAM mostly metal oxides are sandwiched between two metal electrodes. Due to the resistance changes property , Is it possible to use for sensor applications. If so, what are the constraints in the implementation?
well the first question would be, what kind of sensor? I could imagine using it for some kind of oxygen sensor. Having a very oxygen vacancy rich oxide in combination with a top electrode that allwos oxygen exchange (a porous material maybe) but I think that this would not be the most precise measurement method. The large variability of RRAM probably prevents any quantitative sensor applications.