By using the Vapor-Liquid-Solid (VLS) growth method, normally Au, Ni or Fe are used as the metal catalysts for GaN nanowires growth in MOCVD. And Ga or In metal droplets are often used for InP nanowires growth. I would like to know, if we could use Ga or In droplets in MOCVD to grow GaN nanowires? If we can do it like this, we could skip the ex-situ metal deposition step and just use the TMG or TMIn MO-source to obtain the Ga or In metal droplet in the MOCVD chamber.
The major problem will be to control the droplet size and spacing/spreading. However, you can optimize the temperature and other conditions suitable for the control of Ga droplet formation from the bulk source material. In this condition, you can grow GaN in the self catalytic mode under Ga rich condition, and slowly switching to N rich condition.
For me it is really confusing when you talk VLS and MOCVD together. The two deposition techniques are entirely different. To answer properly I need to know which method you are talking about.
Following publications might help you to adopt proper growth conditions:
1. Self-organized growth of catalyst-free GaN nano- and micro-rods on Si(111) substrates by MOCVD. DOI: 10.1002/pssb.201451508
2. http://iemn.univ-lille1.fr/base-web/GDRNanofil/workshop%20Valbonne%202012/croissance/Joel%20Eymery.pdf
3. Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition. http://dx.doi.org/10.1063/1.1843281
- Badges
- Science topic
- Similar topics
- Engineering
- Materials Engineering
- Powders