After the deposition of the CZT/CIG, the sulfurization or selenization will be done. During that process, Selenium or Sulfur penetrate the CZT/CIG layer and react with the Mo back contact layer forming MoS2/MoSe2 which is not a desirable one as it reduces the efficiency. To prevent the formation of MoS2/MoSe2, can we deposit the Mo oxide layer over the Mo back contact? Mo oxide is a conductor, and has good conductivity.
Hope it will work. See for the roll over behaviour after doing this. If roll over in IV is more, then the barrier is increased.
Maybe you could read these two papers
"Spray Pyrolysis of CuIn(S,Se)2 Solar Cells with 5.9% Efficiency: A Method to Prevent Mo Oxidation in Ambient Atmosphere"
"Optimization of MoSe2 formation for Cu(In,Ga)Se2-based solar cells by using thin superficial molybdenum oxide barrier layers"
one of these want to avoid the formation of Mo oxide
the other have the same idea of yours, but they didn't give the device performance.
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