I need some information about experimental procedure and data analysis.
Hello Daniel.
Check if these might help you...
You can find out carrier density, mobility and carrier type by simple Hall Voltage measurement and I-V characteristic as follows.
1) At first by making two metal contacts measure I-V characteristic, and find out conductivity from (Sigma= L/R.A), u need to measure the dimensions (width, thickness n distance between two electrodes) of the film.
2) Hall Effect Measurement.
q.(v x B) = q.E
(J/nq).B = E
Rh= (1/nq ) =E/J.B
Hall Coeffeicient, U can find out Carrier concentration (n) from Rh.
3) Finally you can find out mobility from the formula
Sigma = (mobility). n.q
Otherwise you can measure temperature dependent conductivity.
Hello Daniel.
Check if these might help you...
You can find out carrier density, mobility and carrier type by simple Hall Voltage measurement and I-V characteristic as follows.
1) At first by making two metal contacts measure I-V characteristic, and find out conductivity from (Sigma= L/R.A), u need to measure the dimensions (width, thickness n distance between two electrodes) of the film.
2) Hall Effect Measurement.
q.(v x B) = q.E
(J/nq).B = E
Rh= (1/nq ) =E/J.B
Hall Coeffeicient, U can find out Carrier concentration (n) from Rh.
3) Finally you can find out mobility from the formula
Sigma = (mobility). n.q
Otherwise you can measure temperature dependent conductivity.
dear colleague
thank you very much for your help
I appreciate your answer
Typical OFET is not characterized by Hall measurement, but just a simple DC measurement.
1/ Output characteristics: you fix gate voltage (Vgs) and sweep drain-source voltage (Vds) and measure current (Ids), at several Vgs. In output curves you'll find out at what voltage range the device is in linear regime and at what voltage range it is in saturation regime.
2/ Transfer characteristics: you fix Vds, sweep Vgs and measure Ids (at several Vgs).
In the attached file you'll find how to calculate mobility in section 2.2. If you have further questions, I'm happy to help.
http://pubs.acs.org/doi/pdf/10.1021/cr0501543
Dear colleague,
Thank very much your answer , I am going to download this file. I appreciate your help.
I am going to read this review. I wil lcertainly ask you some questions.
Thank you again.
The mobility of organic semiconductors depends on various factors. In an OFET , your mobility could be affected by the traps and organization of organic semiconductor with the dielectric and even contact resistance. Time of Flight can be used to measure the overall mobility. see. K.L. Woon ,M.P. Aldred , P. Vlachos, M. O Neill, S.M. Kelly, Georg Mehl Electronic Charge Transport in Extended Nematic Liquid Crystals , Chemistry of Materials , 18, 2311, 2006
I do notice that some people use dark-injection to measure the mobility . The other more complicated method is to use the impedance measurement.
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