I am interested in creating a pure silicon powder from a silicon wafer.
1. What would be the best way to accomplish this?
2. Additionally, if I wished to dope the powder to be p-type, as well as n-type, what recommendations to achieve this do you have?
3. Best way to change the morphology of the powder from microparticles/nanoparticles to nanowires?
Thank you for your time,
Tyler
Hi
firstly, you have to use melting process and you need more than 1500 c and you need vaccum with Ar gas flow, to avoid oxygen.
2- use a si wafer substrate anneal it 180 c for one hour and a layer of sio2 will engender. deposit finger light resist and make it hard by light then you HF to solve sio2 from the surface and use a solvent for light resistmaterial then you have some rod and you can dope some 3 or 5 capacity materials on it.
3- after melting by 1500c you can use a pure crystal with favorite crystal direction by convection methos you may change the crystal direction. Or another way is Thermal Method( using Autoclave)
Hi Tyler,
I hope that my answer will help you out, as I am working on PVD based techniques to grow oxygen free nanostructured thin films and powers of different materials. You may try sputtering to grow odixe free power of silicon. For this purpose, you have to make an arrangment of liquid nitrogen filled cold finger made of copper in the sputtering chamber to work as a substrate holder, and a sputtering target of Si. Thereafter, directly sputter the silicon on copper cold finger under high vacuum and scrap it later on. In this way you may get oxide free power of silicon.
With best regards:
Satyendra Mourya
- Badges
- Science topic
- Similar topics
- Engineering
- Materials Engineering
- Powders