yes we have the facility of evaluating residual stress by using Wafer curvature technique (Stoney's equation). You can see the following paper

Estimation of residual stress in Pb(Zr0.52Ti0.48)O3/BiFeO3 multilayers deposited on silicon, Journal of Applied Physics (Impact Factor: 2.19). 11/2013; 114(17):174103

Thank you. Can you send me the full text

Hi,

I used this paper by Janssen et al. for the topic of Stoney equation: "Celebrating the 100th anniversary of the Stoney equation for film stress: Developments from polycrystalline steel strips to single crystal silicon wafers"

It's nice, that the Stoney equation can be applied ex situ by e.g. using profilometry or better yet in-situ by e.g. MOS laser curvature sensor by k-Space. We use both methods with success.

http://www.sciencedirect.com/science/article/pii/S0040609008007669

Thank you Dr.Pavel

We measure the rear surface of a thin substrate interferometrically before and after deposition to determine the change in curvature as a result of the coating (to find R in Stoney's equation).  Since thin films are phase devices, we use the uncoated side of the substrate to avoid changes in phase from the coating (and then change the sign of the curvature for side 1).  See the attached.

Article Stress Compensation in Hafnia/Silica Optical Coatings by Inc...

Thank you Dr.James