I am dealing with amorphous semiconductor films (thickness of the orders of 1-2 microns). A true TOF experiment (where the pulsed light creates a thin sheet of e-h pairs) is difficult because the absorption depth of light is comparable to film thickness.
Does anyone know some references of similar works? would be really helpful!
This paper met be useful for you:
http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=7372415&url=http%3A%2F%2Fieeexplore.ieee.org%2Fiel7%2F16%2F7387799%2F07372415.pdf%3Farnumber%3D7372415
http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=7372415&url=http%3A%2F%2Fieeexplore.ieee.org%2Fiel7%2F16%2F7387799%2F07372415.pdf%3Farnumber%3D7372415
Dear Gyanendra Bhattarai ,
If i understood your question, you want to measure the time of flight in a thin amorphous semiconductor because the thickness of the samples is of about the absorption depth. As proposal you can arrange your device in the lateral direction such that you concentrate your beam and confine it such that its center is well defined, then you can arrange some collectors at different distances from the beam center while applying the electric field from two farther spaced contacts. In this way the photo generated e-h pairs will drift laterally to the collector contact under the effect of the electric field. For more information please see S. M. Sze, physics of semiconductor devices. chapter 1.
wish you success
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