Thank you, Dr. Ashraf, for sharing your work and highlighting the importance of accurate device parameter calculations for n-FET and p-FET modeling. It is indeed critical that device physics analyses are precise, especially given the impact of FET modeling on modern semiconductor design and technology scaling.

Your book seems to provide a detailed, parameter-centric approach that could help researchers and engineers identify and correct longstanding inaccuracies in FET performance evaluation. I appreciate the emphasis on analytical derivation and comprehensive tabulated data, as such resources are invaluable for both academic research and practical device design.

For those interested, readers may find it beneficial to review the SpringerLink page for your book, Parameter-Centric Scaled FET Devices: Physics Based Perspectives and Attributes, for further details and examples of your methodology.

This work could stimulate discussion and further research on refining FET modeling and transport analysis

Thank you, Zein Al-Abideen Douba for your response and assessment.

In fact, degenerate doping for n and p-type silicon substrates at T = 300 K are key requirements for many optical devices like photodetectors, solar cells, quantum well infra-red photodetectors (QWIP), etc and band non parabolicity effect and incomplete ionization assessment become vital for majority carrier and minority carrier density and transport both for excess carriers (non-equilibrium) and at equilibrium. This book is characteristically novel and singular to-date not only for accurate parameters computations for FET performance assessment, but also for setting questions for courses based on these book contents in graduate level courses in universities world-wide.

Sincerely,

Dr. Nabil Shovon Ashraf

Currently unaffiliated as a faculty with any university in Dhaka, Bangladesh since May 2022

Dhaka, Bangladesh.