The thermal study of MOSFET is undoubtedly very important as it leads to important design constraints. In Bulk the heating is less but in SOI it is more due to its packed shape and self-heating nature.So the thermal study is very important in high volatage POWER MOSFETs and SOI based MOSFETs.For further details regarding POWER MOSFET thermal study you can refer to the link below:
MOSFET (metal-oxide semiconductor field-effect transistor) is a special type of field-effect transistor ( FET ) that works by electronically varying the width of a channel along which charge carriers ( electron s or hole s) flow. The wider the channel, the better the device conducts. This transistor is a semiconductor device which is widely used for switching and amplifying electronic signals in the electronic devices. The MOSFET is a three terminal device such as source, gate, and drain. There are two classes of MOSFETs. There is depletion mode and there is enhancement mode. Power MOSFETs are commonly used in automotive electronics, particularly as switching devices in electronic control units, and as power converters in modern electric vehicles. The insulated-gate bipolar transistor (IGBT), a hybrid MOS-bipolar transistor, is also used for a wide variety of applications.
For thermal efficiency,
Engineers have long understood that MOSFETs are positive temperature coefficient devices. Engineers often think of a MOSFET as a single power transistor, but it is a collection of thousands of tiny power FET cells connected in parallel. In terms of sharing current, the same application of the positive temperature coefficient applies. With a good thermal path between devices, the positive temperature coefficient reduces the current in the hottest device and forces more of it to flow in the cooler device, thereby avoiding thermal runaway, because system efficiency is an important parameter, it is tempting to use the largest MOSFET possible to reduce losses.
MOSFET (metal-oxide semiconductor field-effect transistor) is a special type of field-effect transistor ( FET ) that works by electronically varying the width of a channel along which charge carriers ( electron s or hole s) flow. The wider the channel, the better the device conducts. This transistor is a semiconductor device which is widely used for switching and amplifying electronic signals in the electronic devices. The MOSFET is a three terminal device such as source, gate, and drain. There are two classes of MOSFETs. There is depletion mode and there is enhancement mode. Power MOSFETs are commonly used in automotive electronics, particularly as switching devices in electronic control units, and as power converters in modern electric vehicles. The insulated-gate bipolar transistor (IGBT), a hybrid MOS-bipolar transistor, is also used for a wide variety of applications.
For thermal ,
Engineers have long understood that MOSFETs are positive temperature coefficient devices. Engineers often think of a MOSFET as a single power transistor, but it is a collection of thousands of tiny power FET cells connected in parallel. In terms of sharing current, the same application of the positive temperature coefficient applies. With a good thermal path between devices, the positive temperature coefficient reduces the current in the hottest device and forces more of it to flow in the cooler device, thereby avoiding thermal runaway, because system efficiency is an important parameter, it is tempting to use the largest MOSFET possible to reduce losses.