Please,
in a simulation study, without taking into account the effect of interface states,
Why the series resistance increase with increasing of temperature for Schottky nanowire diode, in contrary to the theory of carriers generation by thermal excitation?
Dear Hitcham,
This behavior of the series resistance Rs is a typical behavior due to the decrease of the mobility with increasing temperature.
I predict that your nanowires are low doped such that that the charge carriers is dominated by the doping and the mobility is dominated by the lattice mobility.
It is so that sigma= q mu (n0 +p0)
where q is the electronic charge,
mu is the mobility
and n0,p0 are the electron and hole concentrations.
Best wishes
Abdelhalim abdelnaby Zekry Thank you very much dear professor Abdelhalim Zekry for your time and consideration,
your predict is perfect, the doping concentration is (n-type) with Nd=5E17 and the diameter of the nanowire is equal 200 nm.
Your answer, dear professor, leads to another question more confusing to me, of course, if you please,
the behavior mentioned above is for work function of Schottky contact less or equal to 5.1 eV. But, when the work function increase to 5.3 eV, the structure shows an opposite behavior, where, the series resistance decrease with inceasing of temperature.
How can the work function affect on the series resistance behavior and make it change oppositely,
Best regards.
Gayen, R. N., S. R. Bhattacharyya, and P. Jana. "Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes." Semiconductor Science and Technology 29, no. 9 (2014): 095022.
Azeez Abdullah Barzinjy Thank you very much dear Dr Azeez Barzinjy for the important reference, best regards.
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