Why the Electron Mobility is low than Hole Mobility in Graphene especially in graphene based FET.
For more information please refer to below articles.
1. Silvestre, Ive, Evandro A. de Morais, Angelica O. Melo, Leonardo C. Campos, Alem-Mar B. Goncalves, Alisson R. Cadore, Andre S. Ferlauto, Helio Chacham, Mario SC Mazzoni, and Rodrigo G. Lacerda. "Asymmetric effect of oxygen adsorption on electron and hole mobilities in bilayer graphene: long-and short-range scattering mechanisms." ACS nano 7, no. 8 (2013): 6597-6604.
2. Yuan, Hongtao, Hidekazu Shimotani, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki, and Yoshihiro Iwasa. "High‐density carrier accumulation in ZnO field‐effect transistors gated by electric double layers of ionic liquids." Advanced Functional Materials 19, no. 7 (2009): 1046-1053.
3. Tien, Dung Hoang, Jun-Young Park, Ki Buem Kim, Naesung Lee, and Yongho Seo. "Characterization of graphene-based FET fabricated using a shadow mask." Scientific reports 6 (2016).
In general, electrons and holes will have different mobility values in any semiconductor. Although both electron and hole movement are technically the same thing (electrons moving in different directions), electrons and holes occupy different energy levels in the semiconductor band diagram, so the barriers to their motion are different.
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