Dear colleague Ali Hassan Kazmi,

Have a nice time and good day,

Peace be up on you.

The surface morphology depends on the structure on the material mainly the particle size and and grain-boundary.  

If the surface of the sample is relatively rough and its grain-boundary is irregular, the surface scattering and grain boundary. By changing the Concentration of Ni in NiFe thin films and /or the Orientation of the MgO substrate from 100 to 111, the particle size and/or grain size may have regular or irregular shapes and sizes. So you need to process XRD and TEM for your sample to check the particle's size and shape, to check the grain sizes and shapes you need to process the SEM for your sample.

I wish this is useful and help you.

Yours

A. El-Denglawey

Dear Eldenglawey

Hope you are fine. I did some XRD and AFM ..I will send you some AFM result in Attachment .. Please suggest some good reasoning about the image.

This paper may help you

Confirming the abovementioned point for relation between composition and surface morphology (due to change in the grain size)  added by Dr. Eldenglawey, some people mentioned that: ((resistivity of Permalloy films will decrease with increasing particle size due to reduction in the grain boundary scattering of conduction electrons))

u can check it too in this article

Thanks Amir .. 

Dear colleague,

May be you will find anything useful in some my experience.

In the first the obvious influence of MgO substrate orientation on the morphology of the NiF films this is a good fact. It indicates that film growth process occurs by epitaxy laws. Therefore you can use all the techniques and methods that are available to improve the quality of epitaxial films.

I can suggest the use of surfactants, as effective ways to improve quality of the epitaxial film. Here are some examples:

1.   Graphoepitaxy of NH4J from aqueous solution on structureless substrates with periodic 600 lines per millimeter graphic scratches at 90 or 120 degrees from each other. Crystals of cubic habit orientation (100) are preferably detected on the unstructured substrate having graphic scratches at 90 degrees. Hexagonal habit crystals (111) predominated in the case of graphic scratches at 120 degrees. Important to note that the simple addition of a weak soap solution to NH4J aqueous solution resulted in the change of width to height ratio for the graphoepitaxial islands more than 100 times (see and compare fig. 1c and 1b).

2.   Capillary epitaxy. Structural and electrical properties of III-V films could be improved using capillary epitaxy. The essence of this method is that a thin (less than 50 nm) film of an III-group element is initially deposited on a substrate and then saturated with a V-group component with the formation of a thin continuous epitaxial III-V layer. Following this procedure, the film growth continues to obtain the necessary thickness under conventional epitaxial conditions. The use of capillary forces in the first (heteroepitaxial) stage of III-V film formation led to improvement of epitaxial quality. Capillary epitaxy leads to a change in the growth mechanism. Three-dimensional island mechanism changes to the two-dimensional one with propagation of the growth steps. The height of the crystallization medium decreases in the initial stage due to the capillary forces. This effect impedes growth of epitaxial nuclei in the direction normal to the substrate surface and facilitates their growth in the tangential direction. As a result, the substrate orienting role increases and a transition to the layer-by-layer growth mechanism occurs with a decrease in the growth step height. Consequently, the minimum height of the continuous film decreases and the film structural quality is improved (see http://www.hindawi.com/journals/aoe/2012/907560/ ).

3.   Heteroepitaxy of III-N on various substrates under excess of metal component (see for example Masatomo Sumiya et al. J. Crystal Growth. 2002. V. 237–239. P. 1060).

 Good luck,

Alexander Buzynin

Thankyou soo much for describing these useful details.