why nickel is deposited before aluminum deposition in making contact on solar cell.What is the thickness ratio for nickel and aluminum for good contact?
Normally, front grid is based on Ni/Al/Ni. Bottom Ni is to reduce the potential barrier between TCO and front-grid (so FF is reduced and eta is enhanced), and last Ni layer is to avoid Al oxidation
Hello Goutam
The literature reveals that different types of contacts can be
used. I think Ni/Al contacts are the
best, because they resulted in the smallest resistivity, they contributed
in doping through Al diffusion into the film, and they
are less affected by light as required.
Normally, front grid is based on Ni/Al/Ni. Bottom Ni is to reduce the potential barrier between TCO and front-grid (so FF is reduced and eta is enhanced), and last Ni layer is to avoid Al oxidation
Hi! I also have a question about front grid. I formed the front contact (Ni/Al/Ni) of my device by sputtering technique and I think, I will make thermal process at 300-350 C for 1 minutes by rapid thermal annealing after the deposition of front grid. Do you think that the parameters of rapid thermal process are proper for the structure of CZTS device? I am especially worried about the diffusion of Al into the bottom layers. And does the bottom Ni layer have a fuction to prevent the diffusion of Al? Could you please share your thoughts about this? Thanks in advance.
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