In N-I-P or P-I-N single junction solar cells, top and bottom TCO should be thicker in comparison to N-I-P individual layers. Is there any additional reason for this except surface diffusion?
They must not. Just one usually selects TCO by low enough sheet resistance, and that is achieved with something like 50-100nm thick ITO or FTO.
And what do you mean by surface diffusion in here?
Can anyone explain me the significance of ''dark spectral response'' or " Dark EQE" of solar cell and how it will help to improve the efficiency of solar cell?
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what is the main difference between the growth mechanism of Granular and Columnar growth in microcrystalline silicon thin films?
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See above
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