When measuring the devices, I have found that the gate is connected however the device is not turning on i.e the Id-Vg curve is flat.
Any suggestions as to why this might be?
Hi Jaspreet,
More info on your TFT structure would be helpful. The following is just general comments.
- Did you check the thickness of SiO2? Turn-on voltage might be too high if it is very thick.
- Was ODTS treatment done after the evaporation of Au? If it stays on Au surface, it could make the charge injection more difficult.
- ODTS treatment sometimes makes the surface too hydorphobic to spin-coat the solution on it. Did you check the polymer actually remains on the surface?
I would suggest to first try BGTC structure without ODTS treatment. BGTC has less trouble with the charge injection and P3HT would work even without ODTS (the apparent mobility would be lower, though).
Dear Jaspreet,
Are you using a common gate by doing silicon back metallization? Maybe the leakage the current is more than the ON current. You may isolate the devices using some insulating material.
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