the electron transfer measurement is different with different system and the J_V measurement indicate the characteristic of system .

Measured J-V curves of a variety of system with varying thickness and blend ratios . Current density–voltage (J-V) characteristics of a solar cell under standard test in other types of solar cells, in the case of polymer based devices, there is a lack . Light and dark characteristics for device spin coated

Dear Mufarah Amjad,

Device #1 in your samples demonstrates a good JV characteristics if the OPV is used as a detector. The device structure including each layer thickness are crucial to determine their JV characteristics.

The device #2 has poor JV characteristics, which could be related to your device processing if it has the same device structure as your device #1.

Hope it helps.

Xuhua Wang device structure and thickness in both cases is same (only active layer is different).

From the device #2 curve, can i say that in device #2, there was too much traps in active layer that's why during reverse biasing current didn't saturate?

Hi,

It seems that your device #2 was entering into some kind of breakdown regime earlier than your device#1. In addition to that, Jsc (primary QE) for device #2 was low compared to device#1. Based on these two observations, you can look into the thickness (for electric field determination) and rough estimation of the absorption coefficient (for QE estimation) of the materials that you used in the active area. You can also check dark J-V to further confirm the early breakdown of the device #2.

Thanks.

Raihan

Mohammad Abu Raihan Miah thanks a lot

@Mufarah Amjad,

To say that there are too much traps, you need to run JV in logarithm scale for positive sweeping voltages and negative sweeping voltages. The graphics would tell you more.

Hope it helps.

Xuhua Wang thank you