Hello.
I'm trying to measure the rectification behavior with 2 metals, but when two metals are deposited above the semiconductor, the I_V graph does not show a rectification behavior and acts as a resistor. However, with just one metal deposited, the rectification behavior takes place. I'm using the contact type point.
Why does it happen?
If you use two different metals sandwiched semiconductors, it is likely that you would get the rectification behavior of IV curves due to energy alignments. Since you use contact on the top of surface measurements, the current flow determines your IV curves. The current flow from one metal layer on the top of semiconductors is very different from two layer metals on the top of semiconductors. The IV curves likely depends on the thickness of two metal layers, too.
dear Xuhua Wang have you ever performed something like this? (Schottky diodes on Synopsys)
I'm trying to design Schottky diodes with 2 metals.
I've been trying to change the metal thickness, but the problem still remains.
I think that is something related to the CONTACT commands and the Shottky voltage (command of contact inside SDEVICE coding)
Dear Renato Beraldo,
I did experimental work before not theoretical modelling. The top metal layer should be thicker such as over 50nm. The contact metal on top of semiconductors is normally very thin such as 10nm even less.
The IV curves can demonstrate Schottky diode characteristics.
you can remember what the material is used and if you have experimental with a theoretical model
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