The sample prep is bad, or the beam is too wide (interaction volume) for your domain size.

You can reduce accelerating voltage and beam current to get a finer beam

or try TKD instead.

Dear Bal Mukund Mishra

As you know that the high stacking fault energy is the energy required to induce a higher stacking fault, which is a sort of significant defect in the crystal lattice that leading to disrupt the stacking sequence of atomic planes. For that, performing EBSD is limited in this case. My best regards …

Hi Bal Mukund Mishra ,

Electron Backscatter Diffraction (EBSD) relies on the interaction of an electron beam with the crystalline structure of a metallic sample to produce diffraction patterns, known as Kikuchi bands. These bands are analysed to determine the crystallographic orientation of the material.

When metallic samples are heavily strained, such as in regions subjected to severe plastic deformation, the crystal lattice becomes significantly distorted. This distortion disrupts the periodicity of the lattice, resulting in weak, diffuse, or unrecognizable Kikuchi bands. Consequently, the diffraction patterns cannot be accurately correlated with a specific crystallographic structure, making EBSD analysis difficult or impossible.

High SFE typically reduces the presence of stacking fault defects, as dislocations tend to cross-slip rather than form stacking faults. However, this characteristic does not inherently affect the ability to perform EBSD. The primary challenge lies in the condition of the crystal structure.

Kind regards,

Mauro Francisco Arcidiacono

Mauro Francisco Arcidiacono Thank you