We have deposited Indium doped (1, 2, 3 vol % ) ZnO i.e IZO by reflux method. We have recorded room temperature PL spectra of undoped and IZO samples. We observed that with increase in conc of In upto 2 vol % , the peak intensity at 600 nm increases and further decreases with increase in Indium dopant (i.e 3 vol % of In).

what is the possible reason for decrease in peak intensity of 3 vo % indium doping in ZnO and also why there is non-linear variation in the band gap energy of the same.

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