I want to model CNT based devices in Sentaurus TCAD. But unfortunately, I cannot find important properties of CNT to model CNTFET. I need parametric file such as Silicon.par.
A representative CNFET structure modeled in the VS-CNFET is shown in Fig. 1a: a cylindrical gate-all-around structure with heavily doped source/drain extensions. The CNTs sit on a thick insulator (e.g. SiO2) so the body terminal is assumed to have no effects. As a result the VS-CNFET is a three terminal transistor model. Throughout this manual, Vgs(i) and Vds(i) denote the voltages across the gate to the (interal) source and the (internal) drain, respectively, as shown in the corresponding transistor schematic in Fig. 1b. P-type CNFETs are completely symmetric with ntype CNFETs, i.e. characteristics of I-V and C-V are the same for p-CNFETs and n-CNFETs given the same |Vgs| and |Vds|, due to the symmetry of CNT’s conduction band and valance band.
I don't think it is possible in Sentaurus. The transport models available in Sentaurus i.e. drift-diffusion or energy balance transport cant fully represent the transport of CNTFET. Also, there is a lack of a proper mobility model which describes the mobility of CNTFET. You may simulate it by putting/editing parameters of silicon.par but the result will not be trustworthy.
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