Dear Jasurbeck,

welcome!

The gamma radiation as energetic electromagnetic radiation has a transient effect by generating electron hole pairs as a photoelectric effect and permanent effect as geometrical crystallographic defects which affects basically the minority carrier lifetime as these defects may act as recombination system. If you do not observe any effect then it may be that the gamma dose is so small that it has no apparent effect on the I-V characteristics.

You can calibrate the model of the gamma radiation effect of the model built in the device simulator by comparing it with the experimental data given in the paper at the link: http://www.electrochemsci.org/papers/vol9/90602824.pdf

Best wishes

The above question is about Sentaurus

Studies of the temperature dependence of R (T) and the photoelectric properties of Si have unequivocally established that at high doses a new level is not formed, and the concentration of the main levels (Ev + 0.2 eV, Ev -0.4 eV) of nickel in silicon increases. That is, the reason for the change in the parameters of Si samples at high doses of gamma-ray exposure is the increase in the concentration of electrically active nickel atoms in the nodes of the crystal lattice.

Dear Jasurbeck,

welcome!

The gamma radiation as energetic electromagnetic radiation has a transient effect by generating electron hole pairs as a photoelectric effect and permanent effect as geometrical crystallographic defects which affects basically the minority carrier lifetime as these defects may act as recombination system. If you do not observe any effect then it may be that the gamma dose is so small that it has no apparent effect on the I-V characteristics.

You can calibrate the model of the gamma radiation effect of the model built in the device simulator by comparing it with the experimental data given in the paper at the link: http://www.electrochemsci.org/papers/vol9/90602824.pdf

Best wishes