How does the morphology of impurity affects the dielectric properties. The impurity phase is Hematite so can anyone suggest or refer some literature regarding this.
It is well known that impurities have dominant effect on the conductivity of
semiconductors and therefore on the imaginary part of permittivity (sigma/Omega/eps0 term in the imeginary part of permittivity). In dielectrics, or in wide band-gap semiconductors impurities have relatively small influence on the dielectric properties
up to microwave frequencies (compare e.g. dielectric properties of sapphire and ruby)
Thank you Jerzy Antoni Krupka Sir . Would you please send some related lterature .
J. Krupka, T.Shimada, I. Ueda, W. Karcz
Electromagnetic properties of sapphire, ruby, and irradiated ruby at frequencies of 30-40 GHz Applied Physics Letters 99, 2011 DOI:10.1063/1.3635787
J. Krupka et. al. Electrical properties of as-grown and proton-irradiated high purity silicon
Aug 2016 Nuclear Instruments and Methods in Physics Research... (available on my researchgate page)
Doping of a semiconductor introduces defect levels within the band gap of the semiconductor and this alters the properties of the gap. If the VB and the CB are considered as 2 conductors then the introduction of the impurities alters the dielectric?
In solid state Physics
I suggested this Book
Introduction to Solid State Physics, 8th Edition
Charles Kittel
November 2004, ©2005
Doping results in change in band gap, polarization (particularly interfacial), conductivity or resistivity. This altogether can increase or decrease the dielectric constant and dielectric loss.
Dear Alaka Panda,
the Hematite (impurity phase) might give rise to a new inductive impedance component scaled with the impurity phase density. Related and useful infos can be found in : Negative capacitance (impedance of the inductive type) of silicon... https://link.springer.com/article/10.1134/S1063782606070128
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