We are working in the field of the fabrication of the MTJ based spintronic device.
I just want to know what should be type of Si-substrate (p-type or n-type) and what should be the resistivity of the Si-wafer (highly resistive or less resistive) while planning to fabricate a device.
For the usage of standard SiO2/Si substrates in field effect devices, Si substrates are generally p++ doped since Boron diffuses at a rate that makes junction depths easily controllable. Phosphorus is typically used for bulk-doping of silicon wafers, on the other hand arsenic is used for diffuse junctions, because it diffuses more slowly than phosphorus and is thus one can have more control over fabrication. If one has to use this Si substrate as a back gate electrode then its resistivity should be less than 0.002 ohm-cm. But these low resistance Si substrates are not useful for high frequency applications, where substrate needs to be highly insulating to favoure the propagation of wave. So in these applications Si substrates with resisitivity of more than 20 kohm-cm with oxide thickness of 1 um is used.
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