I want to simulate mobility change in doped silicon due to stress generated after an annealing step using Sprocess Sentaurus TCAD. What model should I use to save mobility degradation during annealing?
Briliant Prabowo
Hi Amira Nabil ,
If you simulated a normal annealing process, you can try the Fermi diffusion model. However, in this model, the point defect maybe cannot be solved. If you want to see the point defect which may affect the diffusion, you can use ChargedEquilibrium Diffusion Model. If you have an advance server to run your simulation and want to simulate it accurately, try the kinetic Monte Carlo (KMC), but KMC takes a longer simulation time.
Good luck with your research.
Briliant
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