There are double gated FETs. I want to see how is the response when the voltage is given to bulk,source grounded and drain is applied a voltage without second gate.
In standard bulk FETs you don't have any oxide layer in between the bulk and the region (as opposite to the gate) where the channel should form so it's pretty hard to form a channel! Applying a voltage to the bulk will probably polarize the p-n Source/Bulk and Bulk/Drain junctions.