We tend to use high frequency and low frequency signals simultaneously in RF sputtering process. How do they affect the plasma? What are their uses?
Hello,
we try 2,45 Ghz with 0 Hz.. (publications of H.Kousaka) we make DLC coatings at very high deposition speeds.
yes, the high frequency is to increase the efectiveness of the low frequency bombardement assistance of ions during deposition. This is the PECVD way, but the other way around is OK too, have high current for doing Sputtering (for sputtering one has invented the magnetron to increase plasma densities, or the HIPIMS for high ionisation).
All the electrical excitation of the plasma are welcome, the point is to make the technology available for high-speed deposition or large area substrates.. everything the user (industry) would want to have to be able to sell its products cheaper.. or to be first of kind and set up a market for the new product.
germans did a good job in technology for the solar business (Von Ardenne, Roth&Rau, Leybold optics, Oerlikon (swiss)). but the japanese TEL or american AMAT/AKT (now some koreans Samsung?) still dominate the semi-market.
the high frequency allows higher plasma densitiy, the low frequency is to control the ionic bombardment of the substrates (in current AND energy, and preferably independently from each other).
then you may read what are the effects of ion energy on thin film at etching or growing. once you know which energy fits to your purpose, one tries to increase the concentration of those species.. this goes with frequency increase to excite the plasma to higher densities.
welcome in the field
lukas
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