If your substrate is not too much contaminated then simple clean it with Acetone, IPA and then DI water (dissolve and stir for atleast 5min in each)

Usually the surface of Si is oxidized. the best way would be to clean it by plasma etching and immediately deposit under vacuum

HF etching can be good to remove oxide and some organic contaminants

That helps very much. Thank you all

Dear Ahmed S. Razeen ,

I came very late to the question. But may answer may be useful to other researchers on the RG.

There is a standard silicon substrate cleaning before deposition which depends on what are you going to deposit.

But a common procedure is to make the following cleaning steps:

- Dipping in trichloroethylene with ultrasound agitation and warming

- Dipping in Ethanol with ultrasound agitation

- Dipping in deionized water with ultrasound agitation.

- purging with dry nitrogen

- Put it dry in an oven at 120 degree centigrade. The oven contains a container with silica gel to absorb the water vapor.

- you have to avoid the contamination of the surface of the substrate by working in a dust free zones such as laminar flow boxes.

Best washes