Actually I measured C K-edge XANES in Total Electron Yield mode (TEY). In the XANES spectrum I observed a shallow dip, 3 eV bellow from the absorption edge in boron carbide thin film which is grown on Si (100) substrate by magnetron sputtering system. What is the physical meaning of this dip?
Check the following paper - I think the XANES features are well discussed there: Appl. Phys. Lett. 75 (1999) 2229.
Hope this helps, Dirk
Dr. Dirk Luetzenkirchen-Hecht
Thank you for your suggestion.
Paresh
Hallo Paresh I get nervous when people start talking about small dips at the carbon edge. I haven't see your data. But if you are not careful a dip can be a result of absorption due to carbon absorption on the optics. It can be normalized out but care is also needed here in choosing the reference spectrum and how the normalization is done see Journal of Electr. Spect and Related Phenomena Volume: 129 Issue: 1 Pages: 1-8 from Scholl et. al.
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