01 January 2017 11 5K Report

During the deposition of Cu2S thin film by RF magnetron sputtering, I kept all other parameter such as Ar pressure, deposition time, RF power ect. constant. Target material is Cu2S. when i am increasing Substrate temperature from 30 C to 350 C, thickness of thin film changes from 250 nm to 78 nm respectively. even crystallanity and absorbance also decreasing with respect to Ts. kindly help me to find it's reason.

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