this is regarding simulating solar cells using comsol semiconducting module. I have a slab of semiconductor sandwiched between two schotkky contacts. I define the generation profile as an interpolation function, and solve the drift diffusion eqn to calculate the extracted current at end terminals. when the bulk recombination term is set to zero, I expected the short circuit current density to be equal to the total number of absorbed photons ( or the generation profile), but the calculated Jsc is less than that, indicating some sort of recombination taking place. I'm trying to find where this is happening. Is it possible this loss occur due to recombination at the end contacts? is there a recombination term associated with schotkky contacts?
Thank you.