Does it mean that during other investigations of thin films, one should not increase temperature and pressure beyond a certain point?
The molecular beam epitaxy is a very low rate deposition method. It is so that one stacks the atoms on the substrate one by one. So, the method is an ultrahigh vacuum method where the pressure of the vapor phase is extremely low.
So, one can build abruptly doped thin mutiple epitaxial layers for optical applications. In this method the substrate temperature is kept las low as possible to achieve such differently doped stacked layers while allowing the the epitaxial process.
Best wishes
Vapor pressure of impinging chemical species together with surface temperature are the main parameters allowing precise control of thin film MBE growth process (growth mode and growth kinetics) which is governed mainly by the kinetics of the surface processes, including under conditions far from thermodynamic equilibrium.
see for instance the following reference:
'' MBE growth and optical properties of III/V-II/VI hybrid core-shell nanowires'' by Alexander Pawlis and Mihail Ion Lepsa
Peter Grünberg Instutite (PGI-9, PGI-10) JARA-Fundamentals for Information Technology Research Center Jülich, 52425
link : https://www.fz-juelich.de/SharedDocs/Downloads/PGI/PGI-3/Gruppe2/NanoelectronicCourseLab/Experiments/V13Script.pdf?__blob=publicationFile
The molecular beam epitaxy is a very low rate deposition method. It is so that one stacks the atoms on the substrate one by one. So, the method is an ultrahigh vacuum method where the pressure of the vapor phase is extremely low.
So, one can build abruptly doped thin mutiple epitaxial layers for optical applications. In this method the substrate temperature is kept las low as possible to achieve such differently doped stacked layers while allowing the the epitaxial process.
Best wishes
Aarik, Jaan, Kaupo Kukli, Aleks Aidla, and Lembit Pung. "Mechanisms of suboxide growth and etching in atomic layer deposition of tantalum oxide from TaCl5 and H2O." Applied surface science 103, no. 4 (1996): 331-341.
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