I ma interested in both the scientific and economic point of view. Preparation of FBAR by using ZnO.
I think AlN is a way better choice than ZnO for TFBARs. The first aspect is the CMOS compability of the two materials, ZnO is hard to deposit on most semiconductors. Other important properties to be compared are the acoustic velocity and acoustic loss which are better in AlN (approximately 10000 m/s & -5 dB/us at 1 GHz for AlN and 6300 m/s & 8 dB/us at 1 GHz for ZnO). And also the trend in the technolgy favors the AlN over ZnO, ZnO and PZT were used widely at the beginning but suppressed by the AlN later on.
Thank You sinan
I know above properties. But i am working on ZnO material in my project.
In this case what i am going to say "ZnO is better than AIN material".
can u help in this way.
The most important backdraw for AlN compared with the ZnO may be the mechanical stresses occuring in the AlN thin films which may cause problems for post-processing. And in terms of costs; the difference between the deposition temperatures can be a useful argument for you. ZnO is usually deposited with a near room temperature process to enhance the resistivity (as normally it is really very hard to obtain high resistivity out of this material, and also it is very diffusive so the temperature MUST be low) whereas good AlN films are usually grown between 200 to 400'C (which is the border-line for the CMOS circuitry), simple analogy low temperature low cost, also the vacuum conditions needed for the AlN deposition is far more demanding than the ZnO which will increase the tooling and maintenance costs. That is all I can say about the advantages of using ZnO...
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