Does the effect of FeRAM's polarization modulation on energy band merely change the width and height of Schottky barrier?What are the differences and unique benefits of changing the Schottky barrier interface with conventional RRAM through charge injection?
Ferroelectric random access memory (FeRAM) relies on the polarization modulation of ferroelectric materials to store and retrieve data. The polarization of a ferroelectric material can be switched between two stable states by the application of an electric field, which allows for the storage of binary data (0s and 1s).
When a ferroelectric material is used as a capacitor in FeRAM, the polarization of the material modulates the width and height of the Schottky barrier at the interface between the ferroelectric material and the conductor. The Schottky barrier is a region of reduced electronic density that forms at the interface between a conductor and a semiconductor or insulator. The modulation of the Schottky barrier by the polarization of the ferroelectric material allows for the storage and retrieval of data in FeRAM.
The main difference between FeRAM and conventional resistive random access memory (RRAM) is the mechanism by which data is stored and retrieved. In RRAM, data is stored and retrieved by the switching of a resistive element between low- and high-resistance states, while in FeRAM, data is stored and retrieved by the switching of the polarization of a ferroelectric material.
One unique benefit of FeRAM is its low power consumption, as it requires relatively low voltage levels to switch the polarization of the ferroelectric material. FeRAM also has a relatively long retention time, meaning that it can retain stored data for long periods of time without the need for refresh cycles. In addition, FeRAM is non-volatile, meaning that it does not require a continuous power supply to retain stored data.
Overall, the ability to modulate the Schottky barrier at the interface between a ferroelectric material and a conductor is a key feature of FeRAM that allows for the storage and retrieval of data. The unique benefits of FeRAM, including low power consumption, long retention time, and non-volatility, make it a promising technology for a variety of applications.
Thanks for your answer. But how the FET to obtain the multi-level storage?
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