Doping of a semiconductor will have the effect of narrowing the band gap, however, if the dopant concentration exceeded a certain limit, problems start to appear. For example, the scattering of conduction electrons will increase as the field inside the crystal is fluctuated due to the existence of high concentration of impurity atoms. This might lead to widening of the band gap.
Yes, at high densities. Try typing the exact same question into google stead of researchgate:
https://www.google.de/?gfe_rd=cr&ei=Q6vMU4mzG8Wb_Qbl1IGYDw&gws_rd=ssl#q=What+is+the+effect+of+doping+density+on+the+band+gap+of+semiconductors%3F
There is some literature available on this topic, you can go through it. With my knowledge, I can say that if there is a significant change in the lattice parameter after doping then you can expect a change in the band gap also including the intermediate state arising from the dopant.
Hi,
As Manuel pointed out there will be huge effect at high doping concentrations. One phenomenon is "Burstein–Moss effect" where the band gap increases significantly, which is different from size effect (as B-M effect will happen in bulk also). Rest Google will tell......
Hi, the doping concentrations surely shift the band gap of the semiconductor materials (blue shift or red shift). Its also depend on the size effect.
Doping of a semiconductor will have the effect of narrowing the band gap, however, if the dopant concentration exceeded a certain limit, problems start to appear. For example, the scattering of conduction electrons will increase as the field inside the crystal is fluctuated due to the existence of high concentration of impurity atoms. This might lead to widening of the band gap.
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