Does the annealing temperature effect the grain size of semiconductors? I used germanium wafer with an annealing temperature of 200 C.
Normally, a grain size increases with an increase of annealing temperature. Check Fig.3 in the attached paper.
Normally, a grain size increases with an increase of annealing temperature. Check Fig.3 in the attached paper.
Due to agglomeration the size is increasing with the annealing temperature. You can check the attached paper:
Dear Layth, here is a Journal of Applied Physics article specifically on grain growth in polycrystalline Germanium, by H. Atwater, C.V. Thompson, & H. Smith from MIT, comparing thermally inducing grain growth with ion induced grain growth.
I attach the paper as well as a key graph in Fig.7 showing the temperature dependence of the grain growth rate in polycrystalline Ge.
Generally, grain size increases with annealing provided temperature is sufficient to move grain boundaries. In case of germanium, I think annealing at 200 C should not affect its grain size.
Dear Layth Mokhles
Have a nice day and good times
Yes, the grain size increases with increasing the annealing temperature. This is because increasing the annealing temp. leads to increase the crystallinity of the material and hence increases the number of crystallites.
The appended files may help you.
https://www.jim.or.jp/journal/e/pdf3/47/03/505.pdf
Good luck
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