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Questions related from Sateesh Prathapani
I am working with ionic semiconductors, the intrinsic carrier concentration calculated is about 10^5 /cm3 for a band gap of 1.54 eV. From the value of experimentally determined fermi level (The...
10 October 2017 9,471 0 View
For ionic semiconductor, GaAs (Eg=1.42 eV, ni ~10^6/cm3) following mass action law np = ni^2, if p = 1, then the maximum value of n is the square of ni which is ~10^12. I would like to know, due...
10 October 2017 6,972 3 View
When we have absolutely single atomic layer graphene, if we pass electron beam (in TEM for SAED pattern) normally to the sheet how diffraction could occur ? For any diffraction condition to be...
03 March 2015 1,277 6 View
If we sandwich a semiconducting material between two metal electrodes, on shining light, electron jumps from valence band to conduction band generating electron - hole pair in the semiconductor....
03 March 2014 1,666 7 View