Dear all,
Can anyone suggest me the easiest way to assess the boron concentration in a thin silicon film (50nm) deposited on a glass/SiO2 substrate? Will EDS in SEM help? There are literature available on using FTIR for this purpose.. Kindly share your ideas.
Thanking you,
Jose
peak intensity in EDS can be used to determine how doping increase or decrease. in percentage
Dopants concentration such as B, and P are very difficult to measure with EDS. For this SIMS would be the method of choice. Try SIMS!!
I would suggest that it depends on roughly how much B you expect to be present. Is it only present as a contaminant (i.e. difficult to measure, of the order of 10^12 cm-3 or ~0.1 parts per billion), or is it high enough in concentration to act as a significant dopant (of the order of parts per million, i.e. much easier to measure)?
EDX could work if the doping is higher than 0.5 at.%, i.e. you should have alloying, not doping. SIMS is a good idea. You can see the depth distribution of boron and confirm the layer thickness. I hope you have good standards for the SIMS measurements.
By FTIR is also possible to determine the doping concentration of B in Si from the area of the absorption peak.
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