You need DHE (differential Hall effect) technique methods, including the conventional DHE or CAOT/DHE, to measure mobility profiles in substrate. Please read, Shu Qin, Y. Jeff Hu, Allen McTeer, Si Prussin, Jason Reyes, “Study of Carrier Mobility of Low Energy High Dose Ion Implantations”, IEEE Trans. on Plasma Science, vol. 39, no. 1, pp. 587-592, January 2011.
Are you interested in the theory of a multiple-layer hall effect? Or that of multiple hall mobility spectrum?
For the former, it is quite a simple extrapolation of a single-layer hall effect theory into a multi-layer where each layer has a given unknown mobility. The problem is that the equations become transcendental and cannot be solved analytically to find the mobility within each region when given the hall voltage as-measured. You need to either fit it with theory-guided simulations, have a good first guess on the layers you expect, or attempt to solve the multi-layer equations iteratively
If it is the latter, there is a suite of papers regarding 'quantitative mobility spectrum analysis' or QMSA. This method looks at the different possible carriers and their relative mobilities when extracted from temperature and magnetic field dependent measurements.
The density of trap states are different within the bulk and on the surface, as a consequence the surface mobility and bulk mobility are different.
For bulk mobility, I have used Time of Flight (TOF) measurement since my material had slow electron and hole mobilities in the order of 0.1 or 0.003 Cm2/V.s. If you are interested to know more about TOF, please let me know.
@Wilhelm Graupner, Rightnow I am using Organic semiconductors, I want to measure the surface of the thin film and bulk material of organic materials and want to know the difference between them.
So basically you will determine the properties of the "defect free" bulk and those of the surface which depend on the surface states / defects. Take a look here http://www.physics.rutgers.edu/A62D03EE-FA78-4BF8-B5AA-90A5D9049D28/FinalDownload/DownloadId-1FB6FD6F8E04C61864C6C8285405C2C1/A62D03EE-FA78-4BF8-B5AA-90A5D9049D28/~podzorov/first_proofs.pdf
Hi I was also following your nice discussion but @Wilhelm Graupner your suggested web page unfortunately is not supported anymore. could you put that pdf other web page please.
You can use hall measurement to measure bulk mobility of material. However the surface mobility is a mobility in thin film transistor, which the carrier flow is on the channel surface. So measure the current in thin film transistor, and then use formula to calculate surface mobility.