You may use up to 5 topics "up top". to get better circulation. Changing topics midstream could also create additional participation. What XRD equipment do you use for HDXRD observations? Post photos if possible. How do you optimize your reflections for rocking curve analuses?

Formation and Characterization of Epitaxial TiO2 and BaTiO3/TiO2 Films on Si Substrate

Myung Bok Lee, Masashi Kawasaki, Mamoru Yoshimoto, Bum Ki Moon1, Hiroshi Ishiwara1, Hideomi Koinuma

Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan ^1Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku Yokohama 226, Japan

(Received September 14, 1994; accepted for publication December 10, 1994)

Rutile-phase TiO2 films were epitaxially grown on Si(100) substrates by oxidizing epitaxial TiN films grown by KrF pulsed excimer laser deposition. The TiO2 film was (110)-oriented and composed of two domains perpendicular to each other in the plane. The electrical resistivity at 2.5 V and the dielectric constant at 1 MHz of the film were 1.1×1010 Ω· cm and 49, respectively. This film could be used as a buffer layer for the growth of epitaxial BaTiO3 film on Si. The BaTiO3 (260 nm)/TiO2 (230 nm) double-layered film showed a high dielectric constant (ε r=91) and a very low leakage current of 5×10-8 A/cm2 at 10 V.

URL: http://jjap.jsap.jp/link?JJAP/34/808/

DOI: 10.1143/JJAP.34.808

KEYWORDS:laser deposition, TiO2, rutile, oxidation, epitaxy, two-domain growth, buffer layer, BaTiO3, dielectric constant, leakage current

http://jjap.jsap.jp/link?JJAP/34/808/

Definitely you have to use epitaxial substrates with high deposition temperatures. Sometimes it is possible to deposit epitaxial films on polycrystalline (Al2O3) and amorphose substrates (fused quartz) too. But you may not be able to repeat results, if you will deposit films on polycrystalline and amorphose substrates