I usually clean ITO for Organic Solar cell and OFET fabrication. I use the following method.....

Rub the ITO substrates with cotton dipped in soap solution.

Dipped the substrates in detergent solution and ultra-sonication for 15-30mins.

Remove the substrates and dipped in de-ionised water and sonicate for 15-30mins.

Then put the substrates in boiling acetone and then boiling isopropanol.

Dry the substrates under Ar/N2 flow, then heated for 15min at 120degC.

Then do plasma cleaning.

Thanx .......:)

I would say it depends on what is your substrate. I used GaAs and InP substrates for ITO deposition and by sputtering and thermal evaporation. I would first clean wafers with (TEC) trichloroethlyne (This chemical is carcinogenic so hardly available in labs). So if we TEC not used then first warm acetone (remember acetone's flash temperature is somewhere near 50C or lower and could catch fire so be careful not to boil it) in ultrasonic bath for 10 min, then Methanol 10 min in ultrasonic bath and then finally place in DI water in sonic bath for 10 min. Blow dry with nitrogen and bake at 150C for 30 min. Plasma cleaning is optional and I did get good films with no adhesion issues at all. Hope that will help.