Hi,
I need to deposit a sacrificial layer (e.g., Al, Cr, or SiO2) with a high selectivity to Si3N4, Ni, and Ti. For example, I am thinking about KOH for Al, or H2O2 for Cr. Can you give me any suggestion?
Thanks in advance for your help
If you want to deposit a metal which would preferentially sacrifice its life in order to protect base material then you have to identify a metal which is more vulnerable to oxidation (anodic) than the base material. In other words the metals in the top of electrochemical series have to be used like Zn, Mg, Cd, Al which would provide anodic coating and protect base material from undergoing corrosion.
Shrikaant Kulkarni
Thank you for your response. I think I should explain my question in this way; I want to use a sacrificial layer underneath of a Silicon nitride layer. As an example, you can think of a cantilever beam. So, to create this beam, the underneath layer of that has to be etched away in a way not to harm the main beam. To be more precise, we need an enchant so as not to attack the other materials used (i.e., Ni, Ti, and silicon Nitride), but to etch either Al, Cr, or SiO2.
Lots of work has been done on the use of Cr as a sacrificial layer in the construction of nanogap devices.
Can you provide a more detailed description of the materials you wish to use in the stack and the aspect ratio of the device. The aspect ratio may restrict your options.
Jules
Jules Lloyd Hammond
Hi,
Actually we want to deposit 4 layers that respectively are a sacrificial layer, 100nm Silicon nitride, 20 nm Titanium, and 200nm Nickle on a Silicon substrate (or a Silicon wafer with a layer of thermal silicon oxide on the top). Our patterns could be assumed as a rectangle with an area of 20*200 um^2. We have used chromium sacrificial layer before, but its enchant started attacking Silicon nitride directly from the pin holes inside it. That's why we are looking for a material so as not to have the other materials used attacked.
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