I am using an Si substrate and sputtering a Cr seed layer (~50 nm, for adhesion). After which I sputter the substrate with 1 um thick Ni film (150 W power, ~E-7 mTorr base pressure, 10 mTorr Ar pressure, room temperature, no substrate bias). I am noticing random streaks of Ni grains that are seemingly fused together all over my film. I am unable to find an explanation. I would really appreciate if someone could help me understand this.
Images: http://imgur.com/PaG3hnG,pZxCd8I,xRC9lN9
Dear researcher please check the surface profile of the deposited Cr layer. What I'm feeling roughness of this deposited layer causes in homogeneous deposition and / or nucleation. When deposition is higher in some area; deposited particles seam together to minimize their surface energy. Please let me know if there is any further progress by depositing a very smooth Cr layer
Thank you for your reply.
The deposition of Cr and Ni was carried out with substrate rotation of 20 rpm to minimize an uneven coat. I apologize for not mentioning this earlier.
All in all, I did 2 depositions. I deposited one Si wafer with only Cr and the other with Cr+Ni. I did notice these features on the Cr deposited wafer as well. Do you think sputter cleaning would be a good idea?
To be on the safe side, I am considering ultrasonic cleaning of Si wafer in Acetone. After which, I will sputter clean the wafer, deposit Cr, sputter clean, deposit Ni and sputter clean again.
I am open to your suggestions and ideas.
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