We have an ICP-RIE system from SAMCO (model RIE-101iPH). To achieve anisotropical etching of Si we use SF6+C4F8+(Ar). However, we see the sample and the Si tray become dark after etching (may be due to passivizing polymer.) Decreasing C4F8 does not help.
Is it common when parameters are not correct?
How can we get rid of this kind of deposition?
A typical recipe that we use is:
ICP power: 250, Bias power: 20 W,
SF6 (5 sccm) +C4F8 (8 sccm) (+Ar-10 sccm)
Process pressure: 0.5 Pa
Tray: Si wafer
Thanks in advanced.
presuming that you are trying for a Bosch process, I feel that the etching parameters are on the lower side, while the passivation is higher. I would increase the flow rate of sf6. Add a little bit of oxygen (10 % of SF6) and remove argon. If possible, increase the substrate temperature to 30 degree.
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