Hello.
I'm working on Graphene.
I transferred Graphene (monolayer, CVD grown polycrystalline, few mm scale) from Cu to SiO2/Si substrate with Polypropylene Carbonate (PPC) method.
I used APS-100 and KOH as Cu, SiO2 etchant.
And atteched image file is the result.
Not everytimes, but many times I got such crumbled Graphene with many holes.
What caused poor transfer results?
When Graphene was removed, I checked the original substrate couldn't see Graphene left there.
So I think this problem was caused during baking and removing PPC after transfer.
Any opinions and experiences will be a great help.
Thank you.
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