Hi,

Check out these articles:

1) A theoretical modeling of photocurrent generation and decay in layered MoS2 thin-film transistor photosensors

2) Exciton Kinetics, Quantum Efficiency, and Efficiency Droop of Monolayer MoS2 Light-Emitting Devices

Thank you very much Mr. Bogdan R. Borodin your answer really helped me.

I found 2 values for Auger recombination coefficients, 1E-24 cm6/s and 1E-31 cm6/s in these articles:

1) High intrinsic mobility and ultrafast carrier dynamics in multilayer metal-dichalcogenide MoS2

2) Recombination Dynamics of Optically Excited Charge Carriers in Bulk MoS2

Could you please suggest which one is more accurate?