I've recently trying to make Schottky diodes using n-type silicon (waveguide shape, ~10um wide). I used silver for my Omni contact and gold for Schottky contact. These metals are both 20nm thick and the distance between two contacts are about 200~300um.
However, I got an I-V curve just like an normal resistance. Where could it possibly go wrong? Is the material? (Maybe my material is contaminated? Mistaking p type Si as n type?) Or maybe the physical scale of my structure? Or some other reasons?
Hope someone give some advices. Thanks.
Dear Sung Pu Yang,
Could you please draw the diagram of your device layout?
It looks like you had a dimension issue.
Dear Sung Pu Yang,
rectifying (Schottky diode) IV-characteristics are usually obtained for high resistivity / low doped material and appropriate Schottky metal choice,
so what´s the doping level of your n-type silicon.
Another effect of Schottky diode rectifying quality (non-linear behavior) is the
surface preparation before metal deposition and area itself:
A very large Schottky contact can look like a ohmic, if this voltage drop
is not the dominant one in your complete network.
Maybe it helps to reduce Schottky diode area as potential
defect sites enabling ohmic current can be avoided?!
Try to analyze IV-curve in the very close vicinity of 0V (+/-0.5V).
Good luck,
Thomas
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