Semi-quantitative character of SIMS analysis (only with special standards)
interesting question since I tend to be biased towards the merits! I can think of a few...
- locally destructive / contamination (particles / Cs-implantation)
- surface transients complicates quantification in the near-surface region (apart from aforementioned matrix effects / ionization efficiency)
- expensive (capital, operation, resources) and slow turn-around
I'd better stop right here before I start considering a career change ;-)
On part of Technicalities
1. Lack of Quantitative results
2. Not true depth profile or 3D analysis generated due to sputtering process and influence of high amu on low amu element stack
3. The data can be highly manupulative and can be very different in aspects if the operation parameters are changed
4. The aspect of sensitivity on instrumental level due to many different parameters that need to be taken care off.
5. very random and unexplainable artifacts specially the jumps in intensity counts during depth profile analysis
6. The ionization theory is still speculative in many aspects..(as from what I know and have read, I might be very wrong in this.)
On Part of Usage,
1. Limitations of integration of tool with other analysis technique, specially during time dependent analysis
2. highly destructive technique compared to AES and XPS
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