i guess for this u can go through a book on Solid state electronics by Neamen. A lot of different approaches have been described in this book on BJT and MOSFETs
The basic theory is same, but the strain effect need to be considered. Try to follow the Papers of Prof. M J. Kumar. The variation of x-composition need to be checked. But in my point of view this strain concept is very old, you can get many literature on HBT from IIT,KGP.
Thank u sir, Mohapatra, actually I m using a heterostructure channel in lateral direction, not in vertical direction, hence no supporting literature I m not getting, nd madam Srikanth I m typically working on 24 nm SOI DG MOSFET, and the books and u r referring are concerned with only basic and long channel devices, any ways thanks for concern, Sir Mohapatra I would be looking forward to your suggestion in future as well ...
S.K Mohoptra is right. Band gap of SiGe semiconductor depends on , germanium mole fraction. .
Dear , a number of article are available. you can see anyone.
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